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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collctor current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC=80C I I VCES C,nom. 1700 200 400 400 V A A A I C CRM TC=25C, Transistor P tot 1660 W VGES +/- 20V V IF 200 A IFRM 400 A VR = 0V, tp = 10ms, TVj = 125C 2 It 11.000 A2s RMS, f = 50 Hz, t = 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, VGE = 15V, Tvj = 25 C C IC = 200A, VGE = 15V, Tvj = 125 IC = 9mA, VCE = VGE, Tvj = 25C V GE(th) min. V CE sat typ. 2,6 3,1 5,5 max. 3,2 3,6 6,5 V V V 4,5 VGE = -15V ... +15V QG - 2,4 - C f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 15 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25 C C VCE = 1700V, VGE = 0V, Tvj = 125 C VCE = 0V, VGE = 20V, Tvj = 25 I I Cres CES - 0,7 0,05 6 - 0,5 nF mA mA GES - 200 nA prepared by: Regine Mallwitz approved by: Christoph Lubke; 28.11.2000 date of publication: 28.11.2000 revision: 2 (Series) 1(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5, Tvj = 25C VGE = 15V, RG = 7,5, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5, Tvj = 25C VGE = 15V, RG = 7,5, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5, Tvj = 25C VGE = 15V, RG = 7,5, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5, Tvj = 25C VGE = 15V, RG = 7,5, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 200A, VCE = 900V, VGE = 15V RG = 7,5, Tvj = 125C, LS = 60nH IC = 200A, VCE = 900V, VGE = 15V RG = 7,5, Tvj = 125C, LS = 60nH tP 10sec, VGE 15V, RG = 7,5 TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 800 30 A nH Eoff 65 mWs Eon 90 mWs tf 0,03 0,03 s s td,off 0,8 0,9 s s tr 0,1 0,1 s s td,on 0,1 0,1 s s min. typ. max. RCC'+EE' - 0,6 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 200A, VGE = 0V, Tvj = 25C IF = 200A, VGE = 0V, Tvj = 125C IF = 200A, - diF/dt = 2300A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 200A, - diF/dt = 2300A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - diF/dt = 2300A/sec VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C Erec 25 50 mWs mWs Qr 60 105 As As IRM 160 200 A A VF min. - typ. 2,1 2,1 max. 2,5 2,5 V V 2(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module dPaste 50m / dgrease 50m RthCK RthJC - typ. - max. 0,075 0,15 0,012 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight max. 5 Nm Al2O3 20 mm 11 mm terminals M6 max. G 420 5 Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 450 400 350 300 IC [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 Tj = 25C Tj = 125C VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 450 400 VGE = 19V I C = f (VCE) Tvj = 125C 350 300 VGE = 15V VGE = 13V VGE = 11V VGE = 9V IC [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 450 400 Tj = 25C 350 300 Tj = 125C IC [A] 250 200 150 100 50 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 450 400 Tj = 25C I F = f (VF) 350 300 Tj = 125C IF [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = Rgoff =7,5, VCE = 900V, Tj = 125C Switching losses (typical) 350 300 250 E [mJ] 200 150 100 50 0 0 50 100 150 200 250 300 350 400 450 Eoff Eon Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 250 Eoff E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 200A , VCE = 900V , Tj = 125C 200 Eon Erec E [mJ] 150 100 50 0 0 5 10 15 20 25 30 35 40 RG [] 6(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Transienter Warmewiderstand Transient thermal impedance 1 ZthJC = f (t) 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 8,37 0,0047 27,92 0,0062 2 24,21 0,0356 55,32 0,0473 3 36,07 0,0613 55,32 0,0473 4 6,35 0,4669 11,45 0,2322 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 450 400 350 IC,Modul IC,Chip 300 250 200 150 100 50 0 0 200 400 600 800 1000 Rg = 7,5 Ohm, T vj= 125C IC [A] 1200 1400 1600 1800 VCE [V] 7(8) BSM200GB170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC 8(8) BSM200GB170DLC |
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